Abid, I.; Mehta, J.; Cordier, Y.; Derluyn, J.; Degroote, S.; Miyake, H.; Medjdoub, F.
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts. Electronics 2021, 10, 635.
https://doi.org/10.3390/electronics10060635
AMA Style
Abid I, Mehta J, Cordier Y, Derluyn J, Degroote S, Miyake H, Medjdoub F.
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts. Electronics. 2021; 10(6):635.
https://doi.org/10.3390/electronics10060635
Chicago/Turabian Style
Abid, Idriss, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake, and Farid Medjdoub.
2021. "AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts" Electronics 10, no. 6: 635.
https://doi.org/10.3390/electronics10060635
APA Style
Abid, I., Mehta, J., Cordier, Y., Derluyn, J., Degroote, S., Miyake, H., & Medjdoub, F.
(2021). AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts. Electronics, 10(6), 635.
https://doi.org/10.3390/electronics10060635