Liang, Y.; Chen, R.; Han, J.; Wang, X.; Chen, Q.; Yang, H.
The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure. Electronics 2021, 10, 440.
https://doi.org/10.3390/electronics10040440
AMA Style
Liang Y, Chen R, Han J, Wang X, Chen Q, Yang H.
The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure. Electronics. 2021; 10(4):440.
https://doi.org/10.3390/electronics10040440
Chicago/Turabian Style
Liang, Yanan, Rui Chen, Jianwei Han, Xuan Wang, Qian Chen, and Han Yang.
2021. "The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure" Electronics 10, no. 4: 440.
https://doi.org/10.3390/electronics10040440
APA Style
Liang, Y., Chen, R., Han, J., Wang, X., Chen, Q., & Yang, H.
(2021). The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure. Electronics, 10(4), 440.
https://doi.org/10.3390/electronics10040440