Hong, J.-Y.; Chen, C.-Y.; Ling, D.-C.; MartÃnez, I.; González-Ruano, C.; Aliev, F.G.
Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. Electronics 2021, 10, 2525.
https://doi.org/10.3390/electronics10202525
AMA Style
Hong J-Y, Chen C-Y, Ling D-C, MartÃnez I, González-Ruano C, Aliev FG.
Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. Electronics. 2021; 10(20):2525.
https://doi.org/10.3390/electronics10202525
Chicago/Turabian Style
Hong, Jhen-Yong, Chun-Yen Chen, Dah-Chin Ling, Isidoro MartÃnez, César González-Ruano, and Farkhad G. Aliev.
2021. "Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses" Electronics 10, no. 20: 2525.
https://doi.org/10.3390/electronics10202525
APA Style
Hong, J.-Y., Chen, C.-Y., Ling, D.-C., MartÃnez, I., González-Ruano, C., & Aliev, F. G.
(2021). Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. Electronics, 10(20), 2525.
https://doi.org/10.3390/electronics10202525