Gaddy, M.; Kuryatkov, V.; Wilson, N.; Neuber, A.; Ness, R.; Nikishin, S.
GaN-Based PCSS with High Breakdown Fields. Electronics 2021, 10, 1600.
https://doi.org/10.3390/electronics10131600
AMA Style
Gaddy M, Kuryatkov V, Wilson N, Neuber A, Ness R, Nikishin S.
GaN-Based PCSS with High Breakdown Fields. Electronics. 2021; 10(13):1600.
https://doi.org/10.3390/electronics10131600
Chicago/Turabian Style
Gaddy, Matthew, Vladimir Kuryatkov, Nicholas Wilson, Andreas Neuber, Richard Ness, and Sergey Nikishin.
2021. "GaN-Based PCSS with High Breakdown Fields" Electronics 10, no. 13: 1600.
https://doi.org/10.3390/electronics10131600
APA Style
Gaddy, M., Kuryatkov, V., Wilson, N., Neuber, A., Ness, R., & Nikishin, S.
(2021). GaN-Based PCSS with High Breakdown Fields. Electronics, 10(13), 1600.
https://doi.org/10.3390/electronics10131600