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Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

1
ICTEAM Institute, Université catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
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CEA-Leti, MINATEC Campus, 38054 Grenoble, France
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Author to whom correspondence should be addressed.
The original of this paper had been presented in IEEE S3S Conference 2013.
J. Low Power Electron. Appl. 2014, 4(3), 201-213; https://doi.org/10.3390/jlpea4030201
Received: 28 February 2014 / Revised: 27 June 2014 / Accepted: 8 July 2014 / Published: 16 July 2014
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2013)
The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the transconductance over drain current (gm/Id) method is preferable for variability studies. It is demonstrated that the subthreshold drain current variability in short channel devices cannot be described by threshold voltage variability. It is suggested to include the effective body factor incorporating short channel effects in order to properly model the subthreshold drain current variability. View Full-Text
Keywords: FD SOI; ultra-thin body and buried oxide (UTBB); variability; subthreshold; threshold voltage; short channel effects FD SOI; ultra-thin body and buried oxide (UTBB); variability; subthreshold; threshold voltage; short channel effects
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Makovejev, S.; Esfeh, B.K.; Andrieu, F.; Raskin, J.-P.; Flandre, D.; Kilchytska, V. Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime. J. Low Power Electron. Appl. 2014, 4, 201-213.

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