Order Article Reprints

Liu Y, Nabatame T, Matsukawa T, Endo K, O'uchi S, Tsukada J, Yamauchi H, Ishikawa Y, Mizubayashi W, Morita Y, et al. Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. Journal of Low Power Electronics and Applications. 2014; 4(2):153-167. https://doi.org/10.3390/jlpea4020153

Liu, Yongxun, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, and et al. 2014. "Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials" Journal of Low Power Electronics and Applications 4, no. 2: 153-167. https://doi.org/10.3390/jlpea4020153

Liu, Y., Nabatame, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2014). Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. Journal of Low Power Electronics and Applications, 4(2), 153-167. https://doi.org/10.3390/jlpea4020153