Liu, Y.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y.;
et al. Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. J. Low Power Electron. Appl. 2014, 4, 153-167.
https://doi.org/10.3390/jlpea4020153
AMA Style
Liu Y, Nabatame T, Matsukawa T, Endo K, O'uchi S, Tsukada J, Yamauchi H, Ishikawa Y, Mizubayashi W, Morita Y,
et al. Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. Journal of Low Power Electronics and Applications. 2014; 4(2):153-167.
https://doi.org/10.3390/jlpea4020153
Chicago/Turabian Style
Liu, Yongxun, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita,
and et al. 2014. "Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials" Journal of Low Power Electronics and Applications 4, no. 2: 153-167.
https://doi.org/10.3390/jlpea4020153
APA Style
Liu, Y., Nabatame, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M.
(2014). Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. Journal of Low Power Electronics and Applications, 4(2), 153-167.
https://doi.org/10.3390/jlpea4020153
