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Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Authors to whom correspondence should be addressed.
Coatings 2019, 9(5), 281;
Received: 20 March 2019 / Revised: 17 April 2019 / Accepted: 23 April 2019 / Published: 26 April 2019
PDF [2506 KB, uploaded 26 April 2019]


β-Ga2O3 films were grown on sapphire (0001) substrates with various O/Ga (VI/III) ratios by metal organic chemical vapor deposition. The effects of VI/III ratio on growth rate, structural, morphological, and Raman properties of the films were systematically studied. By varying the VI/III ratio, the crystalline quality obviously changed. By decreasing the VI/III ratio from 66.9 × 103 to 11.2 × 103, the crystalline quality improved gradually, which was attributed to low nuclei density in the initial stage. However, crystalline quality degraded with further decrease of the VI/III ratio, which was attributed to excessive nucleation rate. View Full-Text
Keywords: β-Ga2O3; MOCVD; VI/III ratio β-Ga2O3; MOCVD; VI/III ratio

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Li, Z.; Jiao, T.; Hu, D.; Lv, Y.; Li, W.; Dong, X.; Zhang, Y.; Feng, Z.; Zhang, B. Study on β-Ga2O3 Films Grown with Various VI/III Ratios by MOCVD. Coatings 2019, 9, 281.

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