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Coatings 2015, 5(1), 54-62;

Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method

Physics Department, Masinde Muliro University of Science and Technology, Kakamega-50100, Kenya
Department of Physics, University of Nairobi, Nairobi-30197, Kenya
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Author to whom correspondence should be addressed.
Academic Editor: Alessandro Lavacchi
Received: 27 December 2014 / Revised: 7 February 2015 / Accepted: 11 February 2015 / Published: 16 February 2015
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Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10−6 and 3.2 × 10−5 cm2/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers. View Full-Text
Keywords: diffusion; ILGAR; In2S3; CuSCN diffusion; ILGAR; In2S3; CuSCN

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Wafula, H.; Robinson, M.; Juma, A.; Sakwa, T.; Kitui, M.; Araoz, R.; Fischer, C.-H. Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method. Coatings 2015, 5, 54-62.

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