Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method
AbstractIon layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10−6 and 3.2 × 10−5 cm2/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers. View Full-Text
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Wafula, H.; Robinson, M.; Juma, A.; Sakwa, T.; Kitui, M.; Araoz, R.; Fischer, C.-H. Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method. Coatings 2015, 5, 54-62.
Wafula H, Robinson M, Juma A, Sakwa T, Kitui M, Araoz R, Fischer C-H. Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method. Coatings. 2015; 5(1):54-62.Chicago/Turabian Style
Wafula, Henry; Robinson, Musembi; Juma, Albert; Sakwa, Thomas; Kitui, Manasse; Araoz, Rodrigo; Fischer, Christian-H. 2015. "Role of Cl on Diffusion of Cu in In2S3 Layers Prepared by Ion Layer Gas Reaction Method." Coatings 5, no. 1: 54-62.