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Journal: Coatings, 2026
Volume: 16
Number: 594

Article: 1 μm C-Doped GaN Thin Buffer on Sapphire with >3 kV Lateral Breakdown Voltage Grown by MOCVD
Authors: by Yitian Zhang, Xianfeng Ni, Qian Fan and Xing Gu
Link: https://www.mdpi.com/2079-6412/16/5/594

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