Kim, H.; Kubota, Y.; Matsushita, N.; Lee, G.; Hong, J.
Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature. Coatings 2025, 15, 1181.
https://doi.org/10.3390/coatings15101181
AMA Style
Kim H, Kubota Y, Matsushita N, Lee G, Hong J.
Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature. Coatings. 2025; 15(10):1181.
https://doi.org/10.3390/coatings15101181
Chicago/Turabian Style
Kim, Haechan, Yuta Kubota, Nobuhiro Matsushita, Gonjae Lee, and Jeongsoo Hong.
2025. "Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature" Coatings 15, no. 10: 1181.
https://doi.org/10.3390/coatings15101181
APA Style
Kim, H., Kubota, Y., Matsushita, N., Lee, G., & Hong, J.
(2025). Structural and Electrical Properties of Si-Doped β-Ga2O3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature. Coatings, 15(10), 1181.
https://doi.org/10.3390/coatings15101181