Surface and Electrical Characterization of Non-Stoichiometric Semiconducting Thin-Film Coatings Based on Ti-Co Mixed Oxides Obtained by Gas Impulse Magnetron Sputtering

This article presents a detailed investigation of non-stoichiometric (Ti,Co)O_x thin films prepared using the Gas Impulse Magnetron Sputtering (GIMS) technique. The films were prepared with various Co contents (3 at.%, 19 at.%, 44 at.%, and 60 at.%) and characterized for their material composition, microstructure, and electrical properties. The films exhibited an ohmic behavior with linear current-voltage (I-V) characteristics, and their resistivity values ranged from approximately 10⁻³ to 10⁴ Ω·cm. The highest resistivity was observed in the film with 3 at.% Co content. Thermoelectric measurements revealed that all of the prepared films displayed n-type semiconducting properties, with the Seebeck coefficient (S) tending close to zero. The resistivity of the films decreased as the temperature increased, affirming their semiconducting nature. The activation energy (E_a) values, determined using the Arrhenius formula, ranged from 0.0058 eV to 0.267 eV, with the highest E_a observed for films containing 3 at.% Co. Additionally, the films’ surface topography and microstructure were examined through Atomic Force Microscopy (AFM) and optical profiler techniques. The results showed that the films had smooth, crack-free surfaces with remarkable homogeneity. The surface diversification decreased with the increase in cobalt in the (Ti,Co)O_x films.