Next Article in Journal
Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition
Previous Article in Journal
Special Issue “1D, 2D, and 3D ZnO: Synthesis, Characterization, and Applications”
Previous Article in Special Issue
Influence of the Physical Properties on the Antibacterial and Photocatalytic Behavior of Ag-Doped Indium Sulfide Film Deposited by Spray Pyrolysis
Article

Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

1
School of Space Science and Physics, Shandong University, Weihai 264209, China
2
State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
*
Author to whom correspondence should be addressed.
Academic Editor: Torsten Brezesinski
Coatings 2021, 11(6), 697; https://doi.org/10.3390/coatings11060697
Received: 26 April 2021 / Revised: 6 June 2021 / Accepted: 7 June 2021 / Published: 10 June 2021
(This article belongs to the Collection Feature Paper Collection in Thin Films)
Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties. View Full-Text
Keywords: nickel oxide thin films; electrical properties; stoichiometry; energy loss near edge structure; microstructure; defect nickel oxide thin films; electrical properties; stoichiometry; energy loss near edge structure; microstructure; defect
Show Figures

Figure 1

MDPI and ACS Style

Liu, Y.-H.; Liu, X.-Y.; Sun, H.; Dai, B.; Zhang, P.; Wang, Y. Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure. Coatings 2021, 11, 697. https://doi.org/10.3390/coatings11060697

AMA Style

Liu Y-H, Liu X-Y, Sun H, Dai B, Zhang P, Wang Y. Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure. Coatings. 2021; 11(6):697. https://doi.org/10.3390/coatings11060697

Chicago/Turabian Style

Liu, Yu-He; Liu, Xiao-Yan; Sun, Hui; Dai, Bo; Zhang, Peng; Wang, Yong. 2021. "Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure" Coatings 11, no. 6: 697. https://doi.org/10.3390/coatings11060697

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop