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Journal: Coatings, 2021
Volume: 11
Number: 589
589
Article: Stable Electron Concentration Si-doped β-Ga₂O₃ Films Homoepitaxial Growth by MOCVD
Authors: by Teng Jiao, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang and Baolin Zhang
Link: https://www.mdpi.com/2079-6412/11/5/589

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