Article Versions Notes

Jiao T, Li Z, Chen W, Dong X, Li Z, Diao Z, Zhang Y, Zhang B. Stable Electron Concentration Si-doped β-Ga₂O₃ Films Homoepitaxial Growth by MOCVD. Coatings. 2021; 11(5):589. https://doi.org/10.3390/coatings11050589

Jiao, Teng, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang, and Baolin Zhang. 2021. "Stable Electron Concentration Si-doped β-Ga₂O₃ Films Homoepitaxial Growth by MOCVD" Coatings 11, no. 5: 589. https://doi.org/10.3390/coatings11050589

Jiao, T., Li, Z., Chen, W., Dong, X., Li, Z., Diao, Z., Zhang, Y., & Zhang, B. (2021). Stable Electron Concentration Si-doped β-Ga₂O₃ Films Homoepitaxial Growth by MOCVD. Coatings, 11(5), 589. https://doi.org/10.3390/coatings11050589