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Journal: Coatings, 2021
Volume: 11
Number: 1535

Article: On the Etching Mechanism of Highly Hydrogenated SiN Films by CF4/D2 Plasma: Comparison with CF4/H2
Authors: by Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine and Masaru Hori
Link: https://www.mdpi.com/2079-6412/11/12/1535

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