Article Versions Notes

Wang HY, Chiu HC, Hsu WC, Liu CM, Chuang CY, Liu JZ, Huang YL. The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate. Coatings. 2020; 10(6):570. https://doi.org/10.3390/coatings10060570

Wang, H.Y., H.C. Chiu, W.C. Hsu, C.M. Liu, C.Y. Chuang, J.Z. Liu, and Y.L. Huang. 2020. "The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate" Coatings 10, no. 6: 570. https://doi.org/10.3390/coatings10060570

Wang, H. Y., Chiu, H. C., Hsu, W. C., Liu, C. M., Chuang, C. Y., Liu, J. Z., & Huang, Y. L. (2020). The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate. Coatings, 10(6), 570. https://doi.org/10.3390/coatings10060570