Next Article in Journal
Biomimetic Collagen/Zn2+-Substituted Calcium Phosphate Composite Coatings on Titanium Substrates as Prospective Bioactive Layer for Implants: A Comparative Study Spin Coating vs. MAPLE
Previous Article in Journal
A Motion-Balanced Sensor Based on the Triboelectricity of Nano-Iron Suspension and Flexible Polymer
Previous Article in Special Issue
Direct Spectroscopy for Probing the Critical Role of Partial Covalency in Oxygen Reduction Reaction for Cobalt-Manganese Spinel Oxides
Article Menu

Export Article

Open AccessArticle

Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

Institut de Ciència dels Materials (ICMUV), Universitat de València, 46980 Paterna (València), Spain
ESRF—The European Synchrotron, 71 avenue des Martyrs, 38043 Grenoble, France
Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
Institut de Ciència Maolecular (ICMOL), Universitat de València, 46980 Paterna (València), Spain
AIXTRON SE, Dornkaulstrasse 2, 52134 Herzogenrath, Germany
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(5), 691;
Received: 28 March 2019 / Revised: 21 April 2019 / Accepted: 24 April 2019 / Published: 3 May 2019
PDF [2338 KB, uploaded 3 May 2019]


Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle catalyst employed during the NW growth. X-ray diffraction and X-ray absorption near edge-structure probe long- and short-range order, respectively, and lead us to the conclusion that while the GaN core and barriers are fully relaxed, there is an induced strain in InGaN layers corresponding to a perfect lattice matching with the GaN core. The photoluminescence spectrum of non-polar InGaN quntum wells is affected by strain and the inhomogeneous alloy distribution but still exhibits a reasonable 20% relative internal quantum efficiency. View Full-Text
Keywords: semiconductor nanowires; synchrotron probes; nano-scale resolution semiconductor nanowires; synchrotron probes; nano-scale resolution

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Supplementary material


Share & Cite This Article

MDPI and ACS Style

Secco, E.; Mengistu, H.T.; Segura-Ruíz, J.; Martínez-Criado, G.; García-Cristóbal, A.; Cantarero, A.; Foltynski, B.; Behmenburg, H.; Giesen, C.; Heuken, M.; Garro, N. Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes. Nanomaterials 2019, 9, 691.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top