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Open AccessArticle

Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper

CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), 01109 Dresden, Germany
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(2), 169;
Received: 28 December 2018 / Revised: 20 January 2019 / Accepted: 22 January 2019 / Published: 30 January 2019
Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm2 V−1 s−1 after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec−1, a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm2 V−1 s−1 and an Ion/Ioff ratio of more than three orders of magnitude. View Full-Text
Keywords: zinc oxide; nanoparticles; paper transistors; printed electronics; electrolyte-gated transistors zinc oxide; nanoparticles; paper transistors; printed electronics; electrolyte-gated transistors
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MDPI and ACS Style

Carvalho, J.T.; Dubceac, V.; Grey, P.; Cunha, I.; Fortunato, E.; Martins, R.; Clausner, A.; Zschech, E.; Pereira, L. Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper. Nanomaterials 2019, 9, 169.

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