Zheng, S.; Wang, C.; Lv, S.; Dong, L.; Li, Z.; Xin, Q.; Song, A.; Zhang, J.; Li, Y.
Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment. Nanomaterials 2025, 15, 460.
https://doi.org/10.3390/nano15060460
AMA Style
Zheng S, Wang C, Lv S, Dong L, Li Z, Xin Q, Song A, Zhang J, Li Y.
Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment. Nanomaterials. 2025; 15(6):460.
https://doi.org/10.3390/nano15060460
Chicago/Turabian Style
Zheng, Shuaiying, Chengyuan Wang, Shaocong Lv, Liwei Dong, Zhijun Li, Qian Xin, Aimin Song, Jiawei Zhang, and Yuxiang Li.
2025. "Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment" Nanomaterials 15, no. 6: 460.
https://doi.org/10.3390/nano15060460
APA Style
Zheng, S., Wang, C., Lv, S., Dong, L., Li, Z., Xin, Q., Song, A., Zhang, J., & Li, Y.
(2025). Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment. Nanomaterials, 15(6), 460.
https://doi.org/10.3390/nano15060460
