Article Versions Notes

Huang Q, Guo Y, Wang A, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q. High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures. Nanomaterials. 2025; 15(5):343. https://doi.org/10.3390/nano15050343

Huang, Qimin, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, and Qingchun Zhang. 2025. "High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures" Nanomaterials 15, no. 5: 343. https://doi.org/10.3390/nano15050343

Huang, Q., Guo, Y., Wang, A., Gu, L., Wang, Z., Ding, C., Shen, Y., Ma, H., & Zhang, Q. (2025). High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures. Nanomaterials, 15(5), 343. https://doi.org/10.3390/nano15050343