Li, C.; Sang, D.; Shi, Y.; Ge, S.; Du, L.; Wang, Q.
High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS2 Nanosheet Heterojunction. Nanomaterials 2025, 15, 1900.
https://doi.org/10.3390/nano15241900
AMA Style
Li C, Sang D, Shi Y, Ge S, Du L, Wang Q.
High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS2 Nanosheet Heterojunction. Nanomaterials. 2025; 15(24):1900.
https://doi.org/10.3390/nano15241900
Chicago/Turabian Style
Li, Changxing, Dandan Sang, Yarong Shi, Shunhao Ge, Lena Du, and Qinglin Wang.
2025. "High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS2 Nanosheet Heterojunction" Nanomaterials 15, no. 24: 1900.
https://doi.org/10.3390/nano15241900
APA Style
Li, C., Sang, D., Shi, Y., Ge, S., Du, L., & Wang, Q.
(2025). High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS2 Nanosheet Heterojunction. Nanomaterials, 15(24), 1900.
https://doi.org/10.3390/nano15241900