Article Versions Notes

Qin H, Wang Z, Li Q, Lin J, Lu D, Huang Y, Gao W, Wang H, Bi C. Interstitial Ag⁺ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites. Nanomaterials. 2025; 15(16):1267. https://doi.org/10.3390/nano15161267

Qin, Haiyang, Zijia Wang, Qinrao Li, Jianxin Lin, Dongzhu Lu, Yicong Huang, Wenke Gao, Huachuan Wang, and Chenghao Bi. 2025. "Interstitial Ag⁺ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites" Nanomaterials 15, no. 16: 1267. https://doi.org/10.3390/nano15161267

Qin, H., Wang, Z., Li, Q., Lin, J., Lu, D., Huang, Y., Gao, W., Wang, H., & Bi, C. (2025). Interstitial Ag⁺ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites. Nanomaterials, 15(16), 1267. https://doi.org/10.3390/nano15161267