Kim, J.; Hwang, I.; Kim, B.; Lee, W.; Song, J.; Jung, Y.; Yoon, C.
Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM. Nanomaterials 2025, 15, 783.
https://doi.org/10.3390/nano15110783
AMA Style
Kim J, Hwang I, Kim B, Lee W, Song J, Jung Y, Yoon C.
Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM. Nanomaterials. 2025; 15(11):783.
https://doi.org/10.3390/nano15110783
Chicago/Turabian Style
Kim, Jiwon, Inkook Hwang, Byungwook Kim, Wookyung Lee, Juha Song, Yeonwoong Jung, and Changbun Yoon.
2025. "Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM" Nanomaterials 15, no. 11: 783.
https://doi.org/10.3390/nano15110783
APA Style
Kim, J., Hwang, I., Kim, B., Lee, W., Song, J., Jung, Y., & Yoon, C.
(2025). Deposition of HfO2 by Remote Plasma ALD for High-Aspect-Ratio Trench Capacitors in DRAM. Nanomaterials, 15(11), 783.
https://doi.org/10.3390/nano15110783