Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica
Abstract
:1. Introduction
2. Materials and Methods
2.1. Materials
2.2. Atomic Layer Deposition of GaOx and InOx on SiO2
2.3. Characterization of the Materials
3. Results
3.1. In-Situ Thermogravimetric Analysis
3.2. Effect of ALD on Surface Area and Pore Size
3.3. Investigation of the Formed Phase and Its Dispersion
3.4. Determination of Ligand Implementation
3.5. Decryption of the Growth Mechanism
3.6. Estimated ALD Oxide Layer Thickness
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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AlOx/SiO2 [68] | GaOx/SiO2 | InOx/SiO2 | |||||||
---|---|---|---|---|---|---|---|---|---|
ALD Cycles | Mass Up./% | Molar Up./mmol·g−1 | Mass Frac./% | Mass Up./% | Molar Up. /mmol·g−1 | Mass Frac./% | Mass Up./% | Molar Up. /mmol·g−1 | Mass Frac./% |
1 | +11.9 | +1.0 | 10.6 | +24.3 | +1.0 | 19.6 | +38.7 | +1.0 | 27.9 |
2 | +11.4 | +1.0 | 18.9 | +16.3 | +0.8 | 28.9 | +44.3 | +1.1 | 45.4 |
3 | +13.4 | +1.2 | 26.9 | +14.2 | +0.7 | 35.4 | +45.8 | +1.1 | 56.3 |
Sum | +36.7 | +3.2 | 26.9 | +54.8 | +2.5 | 35.4 | +128.8 | +3.2 | 56.3 |
Sample | Mass Frac./% | 1 M2O3 Frac./% | 2 M(OH)2 Frac./% | Mass Frac./% (ICP-OES) |
---|---|---|---|---|
1c GaOx | 19.6 (GaOx) | 14.5 (Ga) | 13.1 (Ga) | 14.6 (Ga) |
3c GaOx | 35.4 (GaOx) | 26.3 (Ga) | 23.8 (Ga) | 26.0 (Ga) |
1c InOx | 27.9 (InOx) | 23.1 (In) | 21.5 (In) | 21.1 (In) |
3c InOx | 56.3 (InOx) | 46.6 (In) | 43.4 (In) | 48.5 (In) |
AlOx/SiO2 [68] | GaOx/SiO2 | InOx/SiO2 | ||||
---|---|---|---|---|---|---|
ALD Cycles | SA/m2g−1 | PV/cm3g−1 | SA/m2g−1 | PV/cm3g−1 | SA/m2g−1 | PV/cm3g−1 |
0 | 505 | 0.79 | 505 | 0.79 | 505 | 0.79 |
1 | 435 | 0.66 | 336 | 0.57 | 277 | 0.55 |
2 | 383 | 0.55 | 296 | 0.46 | 216 | 0.34 |
3 | 337 | 0.47 | 259 | 0.39 | 142 | 0.23 |
Sample [68] | Thickness/Å | Sample | Thickness/Å | Sample | Thickness/Å |
---|---|---|---|---|---|
1c AlOx | 0.8 | 1c GaOx | 0.9 | 1c InOx | 1.1 |
2c AlOx | 1.6 | 2c GaOx | 1.6 | 2c InOx | 2.8 |
3c AlOx | 2.5 | 3c GaOx | 2.2 | 3c InOx | 4.6 |
gpc | 0.8 | gpc | 0.7 | gpc | 1.5 |
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Baumgarten, R.; Ingale, P.; Knemeyer, K.; Naumann d’Alnoncourt, R.; Driess, M.; Rosowski, F. Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica. Nanomaterials 2022, 12, 1458. https://doi.org/10.3390/nano12091458
Baumgarten R, Ingale P, Knemeyer K, Naumann d’Alnoncourt R, Driess M, Rosowski F. Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica. Nanomaterials. 2022; 12(9):1458. https://doi.org/10.3390/nano12091458
Chicago/Turabian StyleBaumgarten, Robert, Piyush Ingale, Kristian Knemeyer, Raoul Naumann d’Alnoncourt, Matthias Driess, and Frank Rosowski. 2022. "Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica" Nanomaterials 12, no. 9: 1458. https://doi.org/10.3390/nano12091458