Article Versions Notes

An HD, Lee SH, Park J, Min SR, Kim GU, Yoon YJ, Seo JH, Cho MS, Jang J, Bae J-H, et al. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure. Nanomaterials. 2022; 12(19):3526. https://doi.org/10.3390/nano12193526

An, Hee Dae, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, and et al. 2022. "Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure" Nanomaterials 12, no. 19: 3526. https://doi.org/10.3390/nano12193526

An, H. D., Lee, S. H., Park, J., Min, S. R., Kim, G. U., Yoon, Y. J., Seo, J. H., Cho, M. S., Jang, J., Bae, J.-H., Lee, S.-H., & Kang, I. M. (2022). Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure. Nanomaterials, 12(19), 3526. https://doi.org/10.3390/nano12193526