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Article

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

1
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2
University of Chinese Academy of Sciences, Beijing 100029, China
3
Beijing Superstring Academy of Memory Technology, Beijing 100176, China
4
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Yurii K. Gun’ko
Nanomaterials 2022, 12(15), 2704; https://doi.org/10.3390/nano12152704
Received: 2 June 2022 / Revised: 19 July 2022 / Accepted: 29 July 2022 / Published: 5 August 2022
(This article belongs to the Special Issue Silicon-Based Nanostructures: Fabrication and Characterization)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm−2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future. View Full-Text
Keywords: Si photonics; InAs/GaAs lasers; epitaxial growth; GaAs virtual substrate Si photonics; InAs/GaAs lasers; epitaxial growth; GaAs virtual substrate
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MDPI and ACS Style

Xu, B.; Wang, G.; Du, Y.; Miao, Y.; Li, B.; Zhao, X.; Lin, H.; Yu, J.; Su, J.; Dong, Y.; Ye, T.; Radamson, H.H. Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon. Nanomaterials 2022, 12, 2704. https://doi.org/10.3390/nano12152704

AMA Style

Xu B, Wang G, Du Y, Miao Y, Li B, Zhao X, Lin H, Yu J, Su J, Dong Y, Ye T, Radamson HH. Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon. Nanomaterials. 2022; 12(15):2704. https://doi.org/10.3390/nano12152704

Chicago/Turabian Style

Xu, Buqing, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, and Henry H. Radamson. 2022. "Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon" Nanomaterials 12, no. 15: 2704. https://doi.org/10.3390/nano12152704

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