Rosová, A.; Dobročka, E.; Eliáš, P.; Hasenöhrl, S.; Kučera, M.; Gucmann, F.; Kuzmík, J.
In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD. Nanomaterials 2022, 12, 3496.
https://doi.org/10.3390/nano12193496
AMA Style
Rosová A, Dobročka E, Eliáš P, Hasenöhrl S, Kučera M, Gucmann F, Kuzmík J.
In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD. Nanomaterials. 2022; 12(19):3496.
https://doi.org/10.3390/nano12193496
Chicago/Turabian Style
Rosová, Alica, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann, and Ján Kuzmík.
2022. "In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD" Nanomaterials 12, no. 19: 3496.
https://doi.org/10.3390/nano12193496
APA Style
Rosová, A., Dobročka, E., Eliáš, P., Hasenöhrl, S., Kučera, M., Gucmann, F., & Kuzmík, J.
(2022). In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD. Nanomaterials, 12(19), 3496.
https://doi.org/10.3390/nano12193496