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Nanomaterials
Volume 11
Issue 9
10.3390/nano11092329
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Article

Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

by
Angela Mihaela Baracu
1,†,
Marius Andrei Avram
1,
Carmen Breazu
2,
Mihaela-Cristina Bunea
2,
Marcela Socol
2,
Anca Stanculescu
2,
Elena Matei
2,
Paul Conrad Vaagen Thrane
3,
Christopher Andrew Dirdal
3,
Adrian Dinescu
1,* and
Oana Rasoga
2,*,†
1
National Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania
2
National Institute of Materials Physics, 405 A, Atomistilor Street, P.O. Box M.G. 7, 077125 Magurele, Romania
3
SINTEF Microsystems and Nanotechnology, Gaustadalleen 23C, 0737 Oslo, Norway
*
Authors to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Academic Editor: Chih-Ming Wang
Nanomaterials 2021, 11(9), 2329; https://doi.org/10.3390/nano11092329
Received: 18 August 2021 / Revised: 2 September 2021 / Accepted: 5 September 2021 / Published: 7 September 2021
(This article belongs to the Special Issue Metalens: Applications and Manufacturing)
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Abstract

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer. View Full-Text
Keywords: EBL patterning; cryogenic etching process; stamp fabrication; UV-NIL patterning EBL patterning; cryogenic etching process; stamp fabrication; UV-NIL patterning
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
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MDPI and ACS Style

Baracu, A.M.; Avram, M.A.; Breazu, C.; Bunea, M.-C.; Socol, M.; Stanculescu, A.; Matei, E.; Thrane, P.C.V.; Dirdal, C.A.; Dinescu, A.; Rasoga, O. Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography. Nanomaterials 2021, 11, 2329. https://doi.org/10.3390/nano11092329

AMA Style

Baracu AM, Avram MA, Breazu C, Bunea M-C, Socol M, Stanculescu A, Matei E, Thrane PCV, Dirdal CA, Dinescu A, Rasoga O. Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography. Nanomaterials. 2021; 11(9):2329. https://doi.org/10.3390/nano11092329

Chicago/Turabian Style

Baracu, Angela M., Marius A. Avram, Carmen Breazu, Mihaela-Cristina Bunea, Marcela Socol, Anca Stanculescu, Elena Matei, Paul C.V. Thrane, Christopher A. Dirdal, Adrian Dinescu, and Oana Rasoga. 2021. "Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography" Nanomaterials 11, no. 9: 2329. https://doi.org/10.3390/nano11092329

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