Search Results (19)

Bovine leukemia virus (BLV) is classified as a Deltaretrovirus and shows close genomic and biological similarities with human T-cell leukemia viruses (HTLVs). It serves as the etiological agent for enzootic bovine leukosis (EBL), which stands as the most prevalent neoplastic disease affecting cattle globally. Additionally, BLV has been identified as a potential zoonotic pathogen, although the risk to human health remains a subject of ongoing research. The insidious nature of BLV lies in its predominantly subclinical presentation; the majority of BLV-infected cattle show no apparent symptoms. This subclinical nature poses challenges for disease detection and control, as infected animals can remain unnoticed carriers, contributing to the silent spread of the virus within herds. This characteristic also underscores the importance of surveillance and early detection strategies to monitor BLV prevalence and mitigate its spread. Despite concerted efforts in some regions to implement eradication programs, BLV continues to maintain a high prevalence worldwide. The persistence of BLV in cattle populations highlights the need for innovative and integrated approaches to control and manage the disease effectively. The development of a BLV vaccine represents a significant breakthrough in the fight against BLV transmission. A successful vaccine can not only reduce the incidence of BLV infection but also minimize the associated economic losses linked to reduced milk production, reproductive issues, and the premature culling of infected animals. Therefore, a comprehensive understanding of BLV, encompassing its origin, evolutionary patterns, epidemiology, risk factors, and control strategies, is pivotal. Such knowledge serves as the foundation for the development of effective vaccines, diagnostic tools, and control measures. Through this review, we aim to consolidate and present this multifaceted understanding of BLV, providing valuable insights and guidance for researchers, veterinarians, and policymakers involved in BLV prevention and control efforts globally. Full article

Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optics and chemically amplified resists. EBL and IBL enable high-precision maskless patterning for prototyping but suffer from low throughput. XRL, using synchrotron radiation, achieves deep, high-resolution features, while NIL provides a cost-effective, high-throughput method for replicating nanostructures. Alignment marks play a key role in precise layer-to-layer registration, with innovations enhancing accuracy in advanced systems. The mask fabrication process is also examined, highlighting materials like molybdenum silicide for EUV and defect mitigation strategies such as automated inspection and repair. Despite challenges in resolution, defect control, and material innovation, lithography remains indispensable in semiconductor scaling, supporting applications in integrated circuits, photonics, and MEMS/NEMS devices. Various molecular strategies, mechanisms, and molecular dynamic simulations to overcome the fundamental lithographic limits are also highlighted in detail. This review offers insights into lithography’s present and future, aiding researchers in nanoscale manufacturing advancements. Full article

Electron beam lithography (EBL) is a pivotal technology in the fabrication of nanoscale devices, renowned for its high precision and resolution capabilities. This paper explores the effect of EBL process parameters on various substrate materials, including silicon dioxide, silicon-on-insulator (SOI), and silicon nitride. We specifically investigate the impact of the charging effect and reveal the narrow exposure dose windows necessary to achieve optimal pattern fidelity. Based on the measurement results of linewidth, the relationship between exposure dose and the width of the structure pattern after development was analyzed. The optimum exposure dose window for each substrate is identified. Furthermore, through simulations of the charge effect, we demonstrate strategies for mitigating this effect on different substrates, even in complex structural configurations. Our findings contribute to enhancing the capabilities of EBL in semiconductor and insulator manufacturing and research. Full article

The ability to manufacture complex 3D structures with nanometer-scale resolution, such as Fresnel Zone Plates (FZPs), is crucial to achieve state-of-the-art control in X-ray sources for use in a diverse range of cutting-edge applications. This study demonstrates a novel approach combining Electron Beam Lithography (EBL) and cryoetching to produce silicon-based FZP prototypes as a test bench to assess the strong points and limitations of this fabrication method. Through this method, we obtained FZPs with 100 zones, a diameter of 20 µm, and an outermost zone width of 50 nm, resulting in a high aspect ratio that is suitable for use across a range of photon energies. The process incorporates a chromium mask in the EBL stage, enhancing microstructure precision and mitigating pattern collapse challenges. This minimized issues of under- and over-etching, producing well-defined patterns with a nanometer-scale resolution and low roughness. The refined process thus holds promise for achieving improved optical resolution and efficiency in FZPs, making it viable for the fabrication of high-performance, nanometer-scale devices. Full article

Metal oxide semiconductor (MOS) gas sensors are widely used for gas detection. Typically, the hotplate element is the key component in MOS gas sensors which provide a proper and tunable operation temperature. However, the low power efficiency of the standard hotplates greatly limits the portable application of MOS gas sensors. The miniaturization of the hotplate geometry is one of the most effective methods used to reduce its power consumption. In this work, a new method is presented, combining electron beam lithography (EBL) and focused ion beam (FIB) technologies to obtain low power consumption. EBL is used to define the low-resolution section of the electrode, and FIB technology is utilized to pattern the high-resolution part. Different Au⁺⁺ ion fluences in FIBs are tested in different milling strategies. The resulting devices are characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). Furthermore, the electrical resistance of the hotplate is measured at different voltages, and the operational temperature is calculated based on the Pt temperature coefficient of resistance value. In addition, the thermal heater and electrical stability is studied at different temperatures for 110 h. Finally, the implementation of the fabricated hotplate in ZnO gas sensors is investigated using ethanol at 250 °C. Full article

Children diagnosed with endemic Burkitt lymphoma (eBL) are deficient in interferon-γ (IFN-γ) responses to Epstein–Barr Nuclear Antigen1 (EBNA1), the viral protein that defines the latency I pattern in this B cell tumor. However, the contributions of immune-regulatory cytokines and phenotypes of the EBNA1-specific T cells have not been characterized for eBL. Using a bespoke flow cytometry assay we measured intracellular IFN-γ, IL-10, IL-17A expression and phenotyped CD4⁺ and CD8⁺ T cell effector memory subsets specific to EBNA1 for eBL patients compared to two groups of healthy children with divergent malaria exposures. In response to EBNA1 and a malaria antigen (PfSEA-1A), the three study groups exhibited strikingly different cytokine expression and T cell memory profiles. EBNA1-specific IFN-γ-producing CD4⁺ T cell response rates were lowest in eBL (40%) compared to children with high malaria (84%) and low malaria (66%) exposures (p < 0.0001 and p = 0.0004, respectively). However, eBL patients did not differ in CD8⁺ T cell response rates or the magnitude of IFN-γ expression. In contrast, eBL children were more likely to have EBNA1-specific CD4⁺ T cells expressing IL-10, and less likely to have polyfunctional IFN-γ⁺IL-10⁺ CD4⁺ T cells (p = 0.02). They were also more likely to have IFN-γ⁺IL-17A⁺, IFN-γ⁺ and IL-17A⁺ CD8⁺ T cell subsets compared to healthy children. Cytokine-producing T cell subsets were predominantly CD45RA⁺CCR7⁺ T_NAIVE-LIKE cells, yet PD-1, a marker of persistent activation/exhaustion, was more highly expressed by the central memory (T_CM) and effector memory (T_EM) T cell subsets. In summary, our study suggests that IL-10 mediated immune regulation and depletion of IFN-γ⁺ EBNA1-specific CD4⁺ T cells are complementary mechanisms that contribute to impaired T cell cytotoxicity in eBL pathogenesis. Full article

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer. Full article

Subtropical mixed forest ecosystems are experiencing dramatic changes in precipitation and different plant functional types growing here are expected to respond differently. This study aims to unravel the water use patterns of different plant functional types and their responses to environmental changes in a typical subtropical mixed forest in southern China. Diurnal and seasonal sap flux densities of evergreen broad-leaved trees (EBL), deciduous broad-leaved trees (DBL), and conifers (CON), as well as environmental variables, were recorded simultaneously from May 2016 to March 2019. The results showed that the sap flux density of EBL was significantly higher than those of CON and DBL in all seasons, irrespective of dry or wet seasons. Path analysis revealed that seasonal differences in sap flux density were mainly due to variations in photosynthetic photon flux density (PPFD). At saturating PPFD, changes in sap flux density during the day were in response to vapor pressure deficit (VPD). Regression analyses showed that sap flux density increased logarithmically with PPFD, irrespective of functional type. The hysteresis loops of sap flux density and VPD were different among different plant functional types in wet and dry seasons. Our results demonstrated converging response patterns to environmental variables among the three plant functional types considered in this study. Our findings contribute to a better understanding of the water use strategies of different plant functional types in subtropical mixed forests. Full article

We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. The NAP technique is introduced to form a nanonet-channel instead of the electron beam lithography (EBL) or conventional photolithography method. The size and space of the holes in the nanonet structure are well controlled by oxygen plasma treatment and a metal lift-off process. The nanonet-channel TFTs show improved electrical characteristics in terms of the ION/IOFF, threshold voltage, and subthreshold swing compared with conventional planar devices. The nanonet-channel devices also show a high immunity to hot-carrier injection and a lower variation of electrical characteristics. The standard deviation of VTH (σVTH) is reduced by 33% for a nanonet-channel device with a gate length of 3 μm, which is mainly attributed to the reduction of the grain boundary traps and enhanced gate controllability. These results suggest that the cost-effective NAP technique is promising for manufacturing high-performance nanonet-channel LTPS TFTs with lower electrical variations. Full article

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results. Full article

Background: Endemic Burkitt lymphoma (eBL) is the most common childhood cancer in Africa and is linked to Plasmodium falciparum (Pf) malaria infection, one of the most common and deadly childhood infections in Africa; however, the role of Pf genetic diversity is unclear. A potential role of Pf genetic diversity in eBL has been suggested by a correlation of age-specific patterns of eBL with the complexity of Pf infection in Ghana, Uganda, and Tanzania, as well as a finding of significantly higher Pf genetic diversity, based on a sensitive molecular barcode assay, in eBL cases than matched controls in Malawi. We examined this hypothesis by measuring diversity in Pf-serine repeat antigen-5 (Pfsera5), an antigenic target of blood-stage immunity to malaria, among 200 eBL cases and 140 controls, all Pf polymerase chain reaction (PCR)-positive, in Malawi. Methods: We performed Pfsera5 PCR and sequencing (~3.3 kb over exons II–IV) to determine single or mixed PfSERA5 infection status. The patterns of Pfsera5 PCR positivity, mixed infection, sequence variants, and haplotypes among eBL cases, controls, and combined/pooled were analyzed using frequency tables. The association of mixed Pfsera5 infection with eBL was evaluated using logistic regression, controlling for age, sex, and previously measured Pf genetic diversity. Results: Pfsera5 PCR was positive in 108 eBL cases and 70 controls. Mixed PfSERA5 infection was detected in 41.7% of eBL cases versus 24.3% of controls; the odds ratio (OR) was 2.18, and the 95% confidence interval (CI) was 1.12–4.26, which remained significant in adjusted results (adjusted odds ratio [aOR] of 2.40, 95% CI of 1.11–5.17). A total of 29 nucleotide variations and 96 haplotypes were identified, but these were unrelated to eBL. Conclusions: Our results increase the evidence supporting the hypothesis that infection with mixed Pf infection is increased with eBL and suggest that measuring Pf genetic diversity may provide new insights into the role of Pf infection in eBL. Full article

Polymer nanocomposites have emerged as a new powerful class of materials because of their versatility, adaptability and wide applicability to a variety of fields. In this work, a facile and cost-effective method to develop poly(methyl methacrylate) (PMMA)-based polymer nanocomposites with copper oxide (CuO) nanofillers is presented. The study concentrates on finding an appropriate methodology to realize CuO/PMMA nanocomposites that could be used as resist materials for e-beam lithography (EBL) with the intention of being integrated into nanodevices. The CuO nanofillers were synthesized via a low-cost chemical synthesis, while several loadings, spin coating conditions and two solvents (acetone and methyl ethyl ketone) were explored and assessed with regards to their effect on producing CuO/PMMA nanocomposites. The nanocomposite films were patterned with EBL and contrast curve data and resolution analysis were used to evaluate their performance and suitability as a resist material. Micro-X-ray fluorescence spectroscopy (μ-XRF) complemented with XRF measurements via a handheld instrument (hh-XRF) was additionally employed as an alternative rapid and non-destructive technique in order to investigate the uniform dispersion of the nanofillers within the polymer matrix and to assist in the selection of the optimum preparation conditions. This study revealed that it is possible to produce low-cost CuO/PMMA nanocomposites as a novel resist material without resorting to complicated preparation techniques. Full article

In this paper, we present the optical and electrical properties of surface-patterned GaAs-based Multiquantum Well (MQW) light emitting diodes (LEDs) with one- and two-dimensional photonic crystal (PhC) structures. Optical properties were analyzed in the near and far field, measured by a near-field scanning optical microscope and with a goniophotometer. We demonstrated a strong effect of patterned PhC on the radiation properties and the light extraction efficiency. Enormous surface emission enhancement reaching 110% confirmed the strong effect of the patterned structure on the coupling of the guided modes into the surface emission. Additionally, the considerable effect of the PhC structure diffraction on radiation pattern was confirmed in the near and far field and is in good agreement with the simulated shape of the optical field. Full article

Epstein-Barr virus (EBV) is linked to several cancers, including endemic Burkitt lymphoma (eBL), but causal variants are unknown. We recently reported novel sequence variants in the LMP-1 gene and promoter in EBV genomes sequenced from 13 of 14 BL biopsies. Alignments of the novel sequence variants for 114 published EBV genomes, including 27 from BL cases, revealed four LMP-1 variant patterns, designated A to D. Pattern A variant was found in 48% of BL EBV genomes. Here, we used PCR-Sanger sequencing to evaluate 50 additional BL biopsies from Ghana, Brazil, and Argentina, and peripheral blood samples from 113 eBL cases and 115 controls in Uganda. Pattern A was found in 60.9% of 64 BL biopsies evaluated. Compared to PCR-negative subjects in Uganda, detection of Pattern A in peripheral blood was associated with eBL case status (odds ratio [OR] 31.7, 95% confidence interval: 6.8–149), controlling for relevant confounders. Variant Pattern A and Pattern D were associated with eBL case status, but with lower ORs (9.7 and 13.6, respectively). Our results support the hypothesis that EBV LMP-1 Pattern A may be associated with eBL, but it is not the sole associated variant. Further research is needed to replicate and elucidate our findings. Full article

Polyoxometalate (POM) hybrid materials have shown potential as spin-coatable, patternable dielectric thin-films and components for lithographic resists. In particular, the octamolybdate cluster has been shown to possess good spin-coating properties and the patterning capabilities of hybrid octamolybdate thin-films were explored using a combination of broadband UV and electron beam lithography (EBL) techiniques. Dielectric properties of these films were determined by ellipsometry, and octamolybdate clusters were subsequently investigated as negative resists in various blends for potential uses in next-generation photolithography, where contrast, sensitivity, and line edge roughness characteristics were determined. Preliminary evidence for the suppression of the diffusion of photo-generated acids is presented. Full article