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Journal: Nanomaterials, 2021
Volume: 11
Number: 1689
1689
Article: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Authors: by Yongliang Li, Fei Zhao, Xiaohong Cheng, Haoyan Liu, Ying Zan, Junjie Li, Qingzhu Zhang, Zhenhua Wu, Jun Luo and Wenwu Wang
Link: https://www.mdpi.com/2079-4991/11/7/1689

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