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Journal: Nanomaterials, 2021
Volume: 11
Number: 1626

Article: High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
Authors: by Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte and Filippo Giannazzo

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