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Journal: Nanomaterials, 2021
Volume: 11
Number: 1626
Article:
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy
Authors:
by
Patrick Fiorenza, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte and Filippo Giannazzo
Link:
https://www.mdpi.com/2079-4991/11/6/1626
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