Article Versions Notes

Gao Q, Zhang C, Liu P, Hu Y, Yang K, Yi Z, Liu L, Pan X, Zhang Z, Yang J, et al. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS₂ Transistors. Nanomaterials. 2021; 11(6):1594. https://doi.org/10.3390/nano11061594

Gao, Qingguo, Chongfu Zhang, Ping Liu, Yunfeng Hu, Kaiqiang Yang, Zichuan Yi, Liming Liu, Xinjian Pan, Zhi Zhang, Jianjun Yang, and et al. 2021. "Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS₂ Transistors" Nanomaterials 11, no. 6: 1594. https://doi.org/10.3390/nano11061594

Gao, Q., Zhang, C., Liu, P., Hu, Y., Yang, K., Yi, Z., Liu, L., Pan, X., Zhang, Z., Yang, J., & Chi, F. (2021). Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS₂ Transistors. Nanomaterials, 11(6), 1594. https://doi.org/10.3390/nano11061594