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Journal: Nanomaterials, 2021
Volume: 11
Number: 1401

Article: Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation
Authors: by Te-Jui Yen, Albert Chin and Vladimir Gritsenko
Link: https://www.mdpi.com/2079-4991/11/6/1401

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