Sun, Y.; Kang, X.; Zheng, Y.; Wei, K.; Li, P.; Wang, W.; Liu, X.; Zhang, G.
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials 2020, 10, 657.
https://doi.org/10.3390/nano10040657
AMA Style
Sun Y, Kang X, Zheng Y, Wei K, Li P, Wang W, Liu X, Zhang G.
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials. 2020; 10(4):657.
https://doi.org/10.3390/nano10040657
Chicago/Turabian Style
Sun, Yue, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, and Guoqi Zhang.
2020. "Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics" Nanomaterials 10, no. 4: 657.
https://doi.org/10.3390/nano10040657
APA Style
Sun, Y., Kang, X., Zheng, Y., Wei, K., Li, P., Wang, W., Liu, X., & Zhang, G.
(2020). Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials, 10(4), 657.
https://doi.org/10.3390/nano10040657