Sun, Y.;                     Kang, X.;                     Zheng, Y.;                     Wei, K.;                     Li, P.;                     Wang, W.;                     Liu, X.;                     Zhang, G.    
        Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials 2020, 10, 657.
    https://doi.org/10.3390/nano10040657
    AMA Style
    
                                Sun Y,                                 Kang X,                                 Zheng Y,                                 Wei K,                                 Li P,                                 Wang W,                                 Liu X,                                 Zhang G.        
                Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials. 2020; 10(4):657.
        https://doi.org/10.3390/nano10040657
    
    Chicago/Turabian Style
    
                                Sun, Yue,                                 Xuanwu Kang,                                 Yingkui Zheng,                                 Ke Wei,                                 Pengfei Li,                                 Wenbo Wang,                                 Xinyu Liu,                                 and Guoqi Zhang.        
                2020. "Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics" Nanomaterials 10, no. 4: 657.
        https://doi.org/10.3390/nano10040657
    
    APA Style
    
                                Sun, Y.,                                 Kang, X.,                                 Zheng, Y.,                                 Wei, K.,                                 Li, P.,                                 Wang, W.,                                 Liu, X.,                                 & Zhang, G.        
        
        (2020). Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. Nanomaterials, 10(4), 657.
        https://doi.org/10.3390/nano10040657