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Chiappim W, Watanabe M, Dias V, Testoni G, Rangel R, Fraga M, Maciel H, dos Santos Filho S, Pessoa R. MOS Capacitance Measurements for PEALD TiO₂ Dielectric Films Grown under Different Conditions and the Impact of Al₂O₃ Partial-Monolayer Insertion. Nanomaterials. 2020; 10(2):338. https://doi.org/10.3390/nano10020338

Chiappim, William, Marcos Watanabe, Vanessa Dias, Giorgio Testoni, Ricardo Rangel, Mariana Fraga, Homero Maciel, Sebastião dos Santos Filho, and Rodrigo Pessoa. 2020. "MOS Capacitance Measurements for PEALD TiO₂ Dielectric Films Grown under Different Conditions and the Impact of Al₂O₃ Partial-Monolayer Insertion" Nanomaterials 10, no. 2: 338. https://doi.org/10.3390/nano10020338

Chiappim, W., Watanabe, M., Dias, V., Testoni, G., Rangel, R., Fraga, M., Maciel, H., dos Santos Filho, S., & Pessoa, R. (2020). MOS Capacitance Measurements for PEALD TiO₂ Dielectric Films Grown under Different Conditions and the Impact of Al₂O₃ Partial-Monolayer Insertion. Nanomaterials, 10(2), 338. https://doi.org/10.3390/nano10020338