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Open AccessArticle

Calculations of Some Doping Nanostructurations and Patterns Improving the Functionality of High-Temperature Superconductors for Bolometer Device Applications

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Quantum Materials and Photonics Research Group, Department of Particle Physics, University of Santiago de Compostela, ES-15782 Santiago de Compostela, Spain
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Strategic Grouping in Materials AeMAT, University of Santiago de Compostela, ES-15782 Santiago de Compostela, Spain
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Quantum Materials and Photonics Research Group, Department of Applied Physics, University of Santiago de Compostela, ES-15782 Santiago de Compostela, Spain
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(1), 97; https://doi.org/10.3390/nano10010097
Received: 26 November 2019 / Revised: 26 December 2019 / Accepted: 30 December 2019 / Published: 3 January 2020
(This article belongs to the Special Issue Superconducting- and Graphene-based Devices)
We calculate the effects of doping nanostructuration and the patterning of thin films of high-temperature superconductors (HTS) with the aim of optimizing their functionality as sensing materials for resistive transition-edge bolometer devices (TES). We focus, in particular, on spatial variations of the carrier doping into the CuO 2 layers due to oxygen off-stoichiometry, (that induce, in turn, critical temperature variations) and explore following two major cases of such structurations: First, the random nanoscale disorder intrinsically associated to doping levels that do not maximize the superconducting critical temperature; our studies suggest that this first simple structuration already improves some of the bolometric operational parameters with respect to the conventional, nonstructured HTS materials used until now. Secondly, we consider the imposition of regular arrangements of zones with different nominal doping levels (patterning); we find that such regular patterns may improve the bolometer performance even further. We find one design that improves, with respect to nonstructured HTS materials, both the saturation power and the operating temperature width by more than one order of magnitude. It also almost doubles the response of the sensor to radiation. View Full-Text
Keywords: superconducting devices; photodetectors; nanostructured materials; nanostructured and microstructured superconductors; high temperature superconductors; bolometers superconducting devices; photodetectors; nanostructured materials; nanostructured and microstructured superconductors; high temperature superconductors; bolometers
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MDPI and ACS Style

Verde, J.C.; Viz, A.S.; Botana, M.M.; Montero-Orille, C.; Ramallo, M.V. Calculations of Some Doping Nanostructurations and Patterns Improving the Functionality of High-Temperature Superconductors for Bolometer Device Applications. Nanomaterials 2020, 10, 97.

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