Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Device | Mobility (cm2/V·s) | Vth (V) | SS (mV/Decade) | Ion/Ioff |
---|---|---|---|---|
Ref. TFT | 10.64 | 1.95 | 312 | 1.68 × 107 |
POG. TFT | 16.46 | −0.10 | 97 | 3.99 × 108 |
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Liu, Y.; Liu, C.; Qin, H.; Peng, C.; Lu, M.; Chen, Z.; Zhao, Y. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. Membranes 2021, 11, 902. https://doi.org/10.3390/membranes11110902
Liu Y, Liu C, Qin H, Peng C, Lu M, Chen Z, Zhao Y. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric. Membranes. 2021; 11(11):902. https://doi.org/10.3390/membranes11110902
Chicago/Turabian StyleLiu, Yiming, Chang Liu, Houyun Qin, Chong Peng, Mingxin Lu, Zhanguo Chen, and Yi Zhao. 2021. "Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric" Membranes 11, no. 11: 902. https://doi.org/10.3390/membranes11110902