Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Li, Qi; Dong, Junchen; Han, Dedong; Wang, Yi

doi:10.3390/membranes11120929

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Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

¹

Institute of Microelectronics, Peking University, Beijing 100871, China

²

School of Information & Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China

^*

Authors to whom correspondence should be addressed.

Membranes 2021, 11(12), 929; https://doi.org/10.3390/membranes11120929

Submission received: 31 October 2021 / Revised: 20 November 2021 / Accepted: 24 November 2021 / Published: 26 November 2021

(This article belongs to the Special Issue Thin-Film Transistors)

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Abstract

InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-cost integrated circuits (IC). In the present work, we demonstrate the high-performance, robust ITO TFTs that fabricated at process temperature no higher than 100 °C. The influences of channel thickness (t_ITO, respectively, 6, 9, 12, and 15 nm) on device performance and positive bias stress (PBS) stability of the ITO TFTs are examined. We found that content of oxygen defects positively correlates with t_ITO, leading to increases of both trap states as well as carrier concentration and synthetically determining electrical properties of the ITO TFTs. Interestingly, the ITO TFTs with a t_ITO of 9 nm exhibit the best performance and PBS stability, and typical electrical properties include a field-effect mobility (µ_FE) of 37.69 cm²/Vs, a V_on of −2.3 V, a SS of 167.49 mV/decade, and an on–off current ratio over 10⁷. This work paves the way for practical application of the ITO TFTs.

Keywords: ITO TFTs; channel thickness; electrical characteristics; stability

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MDPI and ACS Style

Li, Q.; Dong, J.; Han, D.; Wang, Y. Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors. Membranes 2021, 11, 929. https://doi.org/10.3390/membranes11120929

AMA Style

Li Q, Dong J, Han D, Wang Y. Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors. Membranes. 2021; 11(12):929. https://doi.org/10.3390/membranes11120929

Chicago/Turabian Style

Li, Qi, Junchen Dong, Dedong Han, and Yi Wang. 2021. "Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors" Membranes 11, no. 12: 929. https://doi.org/10.3390/membranes11120929

APA Style

Li, Q., Dong, J., Han, D., & Wang, Y. (2021). Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors. Membranes, 11(12), 929. https://doi.org/10.3390/membranes11120929

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Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

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