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Appl. Sci. 2018, 8(12), 2703; https://doi.org/10.3390/app8122703

Interface Growth and Void Formation in Sn/Cu and Sn0.7Cu/Cu Systems

1,2, 3, 1,2, 1,2, 1,2, 1,2,* and 1,2,*
1
School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
2
Shanghai Collaborative Innovation Center of Laser Advanced Manufacturing Technology, Shanghai 201620, China
3
AECC Commercial Aircraft Engine manufacturing CO., TLD., Shanghai 200241, China
*
Authors to whom correspondence should be addressed.
Received: 30 November 2018 / Revised: 18 December 2018 / Accepted: 18 December 2018 / Published: 19 December 2018
(This article belongs to the Special Issue Selected Papers from the NMJ2018)
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PDF [3240 KB, uploaded 20 December 2018]
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Abstract

In this work, the effects of electroplated Cu (EP Cu) and Cu addition (0.7%) in Sn solder on the intermetallic compounds (IMCs) growth and void formation were clarified by comparison with solder joints comprising of high purity Cu (HP Cu) substrate and pure Sn solder. After aging processes, a new IMC, Cu3Sn, was formed at the interface, in addition to Cu6Sn5 formed in the as-soldered joints. The EP Cu and Cu addition (0.7%) both had limited effects on the total IMCs thickness. However, the effects varied on the growth behaviors of different IMCs. Comparing to the void-free interface between Sn and HP Cu, a large number of voids were observed at the Cu3Sn/Cu interface in Sn/EP Cu joints. The formation of these voids may be induced by the impurities and fine grain, which were introduced during the electroplating process. The addition of Cu suppressed the inter-diffusion of Cu and Sn at the interface. Consequently, the growth of the Cu3Sn layer and formation of voids were suppressed. View Full-Text
Keywords: Sn/Cu solder joint; intermetallic compounds; void; electroplated Cu; Cu addition Sn/Cu solder joint; intermetallic compounds; void; electroplated Cu; Cu addition
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Chen, J.; Zhang, Y.; Yu, Z.; Zhang, P.; Zhao, W.; Yang, J.; Wu, D. Interface Growth and Void Formation in Sn/Cu and Sn0.7Cu/Cu Systems. Appl. Sci. 2018, 8, 2703.

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