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Appl. Sci. 2015, 5(4), 1494-1502;

Luminescent Properties of Sr4Si3O8Cl4:Eu2+, Bi3+ Phosphors for Near UV InGaN-Based Light-Emitting-Diodes

College of Chemistry and Chemical Engineering, Neijiang Normal University, Neijiang 641112, China
Key Laboratory of Comprehensive Utilization of Mineral Resources in Ethnic Regions, Joint Research Centre for International Cross-Border Ethnic Regions Biomass Clean Utilization in Yunnan, School of Chemistry & Environment, Yunnan Minzu University, Kunming 650500, China
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Totaro Imasaka
Received: 30 September 2015 / Revised: 27 October 2015 / Accepted: 23 November 2015 / Published: 1 December 2015
(This article belongs to the Section Optics and Lasers)
Full-Text   |   PDF [1177 KB, uploaded 1 December 2015]   |  


Sr4Si3O8Cl4 co-doped with Eu2+, Bi3+ were prepared by the high temperature reaction. The structure and luminescent properties of Sr4Si3O8Cl4:Eu2+, Bi3+ were investigated. With the introduction of Bi3+, luminescent properties of these phosphors have been optimized. Compared with Sr3.90Si3O8Cl4:0.10Eu2+, the blue-green phosphor Sr3.50Si3O8Cl4:0.10Eu2+, 0.40Bi3+ shows stronger blue-green emission with broader excitation in near-UV range. Bright blue-green light from the LED means this phosphor can be observed by the naked eye. Hence, it may have an application in near UV LED chips. View Full-Text
Keywords: luminescent properties; phosphors; light-emitting diodes; Sr4Si3O8Cl4 luminescent properties; phosphors; light-emitting diodes; Sr4Si3O8Cl4

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Shen, W.; Zhu, Y.; Wang, Z. Luminescent Properties of Sr4Si3O8Cl4:Eu2+, Bi3+ Phosphors for Near UV InGaN-Based Light-Emitting-Diodes. Appl. Sci. 2015, 5, 1494-1502.

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