Article Versions Notes

Wu Y, Lan L, He P, Lin Y, Deng C, Chen S, Peng J. Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlO_x Gate Dielectrics. Applied Sciences. 2021; 11(10):4393. https://doi.org/10.3390/app11104393

Wu, Yongbo, Linfeng Lan, Penghui He, Yilong Lin, Caihao Deng, Siting Chen, and Junbiao Peng. 2021. "Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlO_x Gate Dielectrics" Applied Sciences 11, no. 10: 4393. https://doi.org/10.3390/app11104393

Wu, Y., Lan, L., He, P., Lin, Y., Deng, C., Chen, S., & Peng, J. (2021). Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlO_x Gate Dielectrics. Applied Sciences, 11(10), 4393. https://doi.org/10.3390/app11104393