Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)
Abstract
:1. Introduction
2. Device Fabrication
3. Hump Effect in SCNW TFET
4. Device Optimization
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Parameters | Value |
---|---|
Source doping concentration, p-type (NS) | 1020 cm−3 |
Drain doping concentration, n-type (ND) | 1020 cm−3 |
Body doping concentration, p-type (NCH) | 1017 cm−3 |
Gate work function | 4.05 eV |
Channel length (LCH) | 30 nm |
Nanowire radius except tunnel region (TB) | 7 nm |
Gate oxide thickness (TOX) | 1 nm |
Length of tunnel region (LTUN) | Variable |
Thickness of tunnel region (TTUN) | Variable |
Drain voltage (VDS) | 0.5 V |
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Lee, S.-H.; Park, J.-U.; Kim, G.; Jee, D.-W.; Kim, J.H.; Kim, S. Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET). Appl. Sci. 2020, 10, 3596. https://doi.org/10.3390/app10103596
Lee S-H, Park J-U, Kim G, Jee D-W, Kim JH, Kim S. Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET). Applied Sciences. 2020; 10(10):3596. https://doi.org/10.3390/app10103596
Chicago/Turabian StyleLee, Seung-Hyun, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, and Sangwan Kim. 2020. "Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)" Applied Sciences 10, no. 10: 3596. https://doi.org/10.3390/app10103596