Next Article in Journal
Study on the Vibration Isolation Performance of Composite Subgrade Structure in Seasonal Frozen Regions
Next Article in Special Issue
Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation
Previous Article in Journal
Exploiting Localized Surface Plasmon Resonances in Subwavelength Spiral Disks for THz Thin Film Sensing
Previous Article in Special Issue
Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
 
 

Order Article Reprints

Journal: Appl. Sci., 2020
Volume: 10
Number: 3596

Article: Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)
Authors: by Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim and Sangwan Kim
Link: https://www.mdpi.com/2076-3417/10/10/3596

MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article and designed to be complimentary to the journal.

Order Cost and Details

Shipping Address

Billing Address

Notes or Comments

Validate and Place Order

The order must be prepaid after it is placed

req denotes required fields.
Back to TopTop