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        Journal: Appl. Sci., 2020
        Volume: 10 
                	Number: 3596 
                
        
        Article:
        Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET) 
        Authors: 
       	by
                    Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim and Sangwan Kim        
        Link:
        https://www.mdpi.com/2076-3417/10/10/3596
        
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