Lee, S.-H.; Park, J.-U.; Kim, G.; Jee, D.-W.; Kim, J.H.; Kim, S.
Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET). Appl. Sci. 2020, 10, 3596.
https://doi.org/10.3390/app10103596
AMA Style
Lee S-H, Park J-U, Kim G, Jee D-W, Kim JH, Kim S.
Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET). Applied Sciences. 2020; 10(10):3596.
https://doi.org/10.3390/app10103596
Chicago/Turabian Style
Lee, Seung-Hyun, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, and Sangwan Kim.
2020. "Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)" Applied Sciences 10, no. 10: 3596.
https://doi.org/10.3390/app10103596
APA Style
Lee, S.-H., Park, J.-U., Kim, G., Jee, D.-W., Kim, J. H., & Kim, S.
(2020). Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET). Applied Sciences, 10(10), 3596.
https://doi.org/10.3390/app10103596