Yan, X.; Zhang, J.; Chen, J.; Chi, Y.; Jiang, X.; Chen, T.
Evaluation of Single-Event Upsets in SRAM in 22 nm Fully Depleted Silicon in an Insulator Integrated Circuit Process. Symmetry 2026, 18, 1279.
https://doi.org/10.3390/sym18081279
AMA Style
Yan X, Zhang J, Chen J, Chi Y, Jiang X, Chen T.
Evaluation of Single-Event Upsets in SRAM in 22 nm Fully Depleted Silicon in an Insulator Integrated Circuit Process. Symmetry. 2026; 18(8):1279.
https://doi.org/10.3390/sym18081279
Chicago/Turabian Style
Yan, Xinyi, Jizuo Zhang, Jianjun Chen, Yaqing Chi, Xiao Jiang, and Tao Chen.
2026. "Evaluation of Single-Event Upsets in SRAM in 22 nm Fully Depleted Silicon in an Insulator Integrated Circuit Process" Symmetry 18, no. 8: 1279.
https://doi.org/10.3390/sym18081279
APA Style
Yan, X., Zhang, J., Chen, J., Chi, Y., Jiang, X., & Chen, T.
(2026). Evaluation of Single-Event Upsets in SRAM in 22 nm Fully Depleted Silicon in an Insulator Integrated Circuit Process. Symmetry, 18(8), 1279.
https://doi.org/10.3390/sym18081279