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Open AccessArticle

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

by Andreas Lubatsch 1,† and Regine Frank 2,3,*,†
1
University of Applied Sciences Nürnberg Georg Simon Ohm, Keßlerplatz 12, 90489 Nürnberg, Germany
2
Bell Labs, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA
3
Serin Physics Laboratory, Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019, USA
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Symmetry 2019, 11(10), 1246; https://doi.org/10.3390/sym11101246
Received: 22 July 2019 / Revised: 17 September 2019 / Accepted: 18 September 2019 / Published: 4 October 2019
(This article belongs to the Special Issue Symmetry in Quantum Optics Models)
Spatially uniform optical excitations can induce Floquet topological band structures within insulators which can develop similar or equal characteristics as are known from three-dimensional topological insulators. We derive in this article theoretically the development of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter and we present results for the lifetime of these states and their occupation in the non-equilibrium. The direct physical impact of the mathematical precision of the Floquet-Keldysh theory is evident when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium for a case of ZnO. The physical consequences of the topological non-equilibrium effects in our results for correlated systems are explained with their impact on optoelectronic applications. View Full-Text
Keywords: topological excitations; Floquet; dynamical mean field theory; non-equilibrium; stark-effect; semiconductors topological excitations; Floquet; dynamical mean field theory; non-equilibrium; stark-effect; semiconductors
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Lubatsch, A.; Frank, R. Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors. Symmetry 2019, 11, 1246.

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