Next Article in Journal
Tunable and Polarization-Independent Plasmon-Induced Transparency in a Fourfold Symmetric Metal-Graphene Terahertz Metamaterial
Next Article in Special Issue
Research on Luminance Distributions of Chip-On-Board Light-Emitting Diodes
Previous Article in Journal
Pressure-Induced Phase Transitions in Sesquioxides
Previous Article in Special Issue
LED as Transmitter and Receiver of Light: A Simple Tool to Demonstration Photoelectric Effect
Open AccessArticle

In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN

1
Department of Applied Physics, School of Advanced Engineering, Kogakuin University, Tokyo192-0015, Japan
2
Synchrotron Radiation Research Center, National Institutes for Quantum and Radiological Science and Technology (QST), Hyogo 679-5148, Japan
3
Department of Electrical & Electronic Engineering, Ritsumeikan University, Kyoto 525-8577, Japan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(12), 631; https://doi.org/10.3390/cryst9120631
Received: 31 October 2019 / Revised: 21 November 2019 / Accepted: 25 November 2019 / Published: 28 November 2019
(This article belongs to the Special Issue Recent Advances in Light-Emitting Diodes (LEDs))
In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities.
Keywords: GaInN; InGaN; MBE; in situ XRD RSM; heteroepitaxial growth GaInN; InGaN; MBE; in situ XRD RSM; heteroepitaxial growth
MDPI and ACS Style

Yamaguchi, T.; Sasaki, T.; Fujikawa, S.; Takahasi, M.; Araki, T.; Onuma, T.; Honda, T.; Nanishi, Y. In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN. Crystals 2019, 9, 631.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop