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Crystals 2017, 7(5), 134;

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Hermes-Epitek Corporation, Hisinchu 30077, Taiwan
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Ikai Lo
Received: 12 April 2017 / Revised: 5 May 2017 / Accepted: 9 May 2017 / Published: 12 May 2017
(This article belongs to the Special Issue Advances in GaN Crystals and Their Applications)
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In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 °C were integrated with 3.7-μm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer with a continuous interface resulting from the LT AlN IL was subject to a compressive stress of −0.109 GPa. However, the GaN epilayer with discontinuous interfaces resulting from the HT AlN IL growth under the same flow ratio was subject to a tensile stress of 0.174 GPa. To realize continuous interfaces between the GaN epilayer and HT AlN IL, a higher V/III ratio of 5960 was utilized to suppress the decomposition of GaN. It results in changing the stress state of the GaN-based heterostructure from tensile to compressive. This strategic finding indicates that a stress-controllable GaN on Si can be achieved via the incorporation of HT AlN ILs. A minimum curvature at 5 km−1 is demonstrated for the 3.7-μm GaN-based heterostructure on a 150-mm Si (111) substrate, which has high potential for power switching device applications. View Full-Text
Keywords: GaN; Si substrate; AlN; stress; metalorganic chemical vapor deposition GaN; Si substrate; AlN; stress; metalorganic chemical vapor deposition

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Lin, P.-J.; Tien, C.-H.; Wang, T.-Y.; Chen, C.-L.; Ou, S.-L.; Chung, B.-C.; Wuu, D.-S. On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals 2017, 7, 134.

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