AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
AbstractThe effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from −8.15 to −4.21 V when the device was treated with an Al2O3 layer. The leakage current was reduced from 2.9 × 10−5 to 4.2 × 10−7 mA/mm, and the ION/IOFF ratio increased from 8.3 × 106 to 7.3 × 108 using the corona-discharge plasma treatment, which exhibited an increase of about two orders of magnitude. The device exhibited excellent performance with a subthreshold swing of 78 mV/dec and a peak gain of 47.92 mS/mm at VGS = 10 V. View Full-Text
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Yuan, S.-H.; Chang, F.-Y.; Wuu, D.-S.; Horng, R.-H. AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment. Crystals 2017, 7, 146.
Yuan S-H, Chang F-Y, Wuu D-S, Horng R-H. AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment. Crystals. 2017; 7(5):146.Chicago/Turabian Style
Yuan, Shuo-Huang; Chang, Feng-Yeh; Wuu, Dong-Sing; Horng, Ray-Hua. 2017. "AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment." Crystals 7, no. 5: 146.
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