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AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment

Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Ikai Lo
Crystals 2017, 7(5), 146;
Received: 29 April 2017 / Revised: 13 May 2017 / Accepted: 16 May 2017 / Published: 18 May 2017
(This article belongs to the Special Issue Advances in GaN Crystals and Their Applications)
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The effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from −8.15 to −4.21 V when the device was treated with an Al2O3 layer. The leakage current was reduced from 2.9 × 10−5 to 4.2 × 10−7 mA/mm, and the ION/IOFF ratio increased from 8.3 × 106 to 7.3 × 108 using the corona-discharge plasma treatment, which exhibited an increase of about two orders of magnitude. The device exhibited excellent performance with a subthreshold swing of 78 mV/dec and a peak gain of 47.92 mS/mm at VGS = 10 V. View Full-Text
Keywords: corona-discharge plasma; AlGaN; GaN; metal-oxide-semiconductor high-electron mobility transistor; Al2O3 corona-discharge plasma; AlGaN; GaN; metal-oxide-semiconductor high-electron mobility transistor; Al2O3

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Yuan, S.-H.; Chang, F.-Y.; Wuu, D.-S.; Horng, R.-H. AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment. Crystals 2017, 7, 146.

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